Summit Series

The next-generation power semiconductor is here! Mitsubishi Electric’s new SUMMIT SERIES UPS replaces the silicon IGBT with advanced capability silicon carbide semiconductors. The Institute of Electrical and Electronics Engineers states silicon carbide is to the 21st century what silicon was to the 20th century. Mitsubishi Electric began development of (Silicon Carbide) semiconductors during the early 1990’s and now offers this proven technology for deployment in Mitsubishi’s UPS. Higher efficiencies are achieved across all load levels with SiC’s lower switching losses, higher switching frequencies, and improved thermal conductivity range.


The new Mitsubishi Electric SUMMIT SERIES UPS is truly a game changer. The new three-phase series incorporates silicon carbide semicon- ductors—the next generation of power modules to replace the traditional insulated gate bipolar transistors. Designed for data centers and other demanding mission critical applications, the SUMMIT SERIES is currently offered in 500 kVA and 750 kVA. A very flat efficiency curve allows 98% efficiency down to 30% load, which translates to lower energy usage, lower cooling costs, and lower cost of ownership for you.


 True On-Line Double Conversion SiC Design
Ratings: 500 & 750kVA
Voltage Options: Input – 480 VAC Three Phase, Output – 480 VAC Three Phase

Design Features:

* True On-Line Double Conversion
* Low Audible Noise
* Tablet or Smartphone Compatible
* 1.1:1 Generator Compatibility
* (3) Level SiC Technology
* Advanced DSP Applied ASIC
* Up to 98.2% Efficient
* 98% Efficient Down To 30% Load
* 3-Year Warranty (5 year optional)
* 65 or 100 kAIC options
* Front LCD Display
* Advanced Silicon Carbide (SiC) Technology
* 480 VAC Three Phase Input
* 150% Overload For 10 Seconds
* 480 VAC Output
* Low Heat Loss Design
* 480 VDC Nominal Battery Voltage
* +/- 2% Transient Response (100% step)
* <3% Harmonic Distortion At 100% Load * Modbus TCP/IP & Modbus RTU * SNMP * Web Interface