2033D

MEPPI utilizes IGBT in the converters and inverters of its 2033D Series UPS systems.
These advanced, high-performance transistors provide a variety of intelligent features such as High Ampacity Transistors (600A) and High Speed Switching.

IgBT – Transistors with Excellent Performance Characteristics
Mitsubishi Electric is the leading manufacturer of Insulated Gate Bipolar Transistors (IGBTs),and now utilizes IGBT in the converters and inverters of its 2033D Series
UPS systems. These advanced, high-performance transistors provide a variety of
intelligent features.
● High Ampacity Transistors (600A)
● High Speed Switching
● Low Control Power

Description

Design:

Double Version On-Line Topology
Power Rating: 30, 50, 80kVA
Voltage Options: Input: 480; Output: 208/120 or 480/277
 

Design Features:

* IGBT Converter and Inverter Design
* Dual Input
* Low Input Harmonics, Internal Maintenance Bypass
* 1.1:1Generator Sizing, Quiet Operations
* Available for Parallel Redundant Applications
* UPS Modules UL 1778 Listed
* Waveform Capture Capability
* Two (2) Year Parts and Labor Warranty
* Conformally Coated Printed Circuit Boards
Advanced Touch Screen Monitoring

IgBT – Transistors with Excellent Performance Characteristics

Mitsubishi Electric is the leading manufacturer of Insulated Gate Bipolar Transistors (IGBTs),and now utilizes IGBT in the converters and inverters of its 2033D Series
UPS systems. These advanced, high-performance transistors provide a variety of
intelligent features.
● High Ampacity Transistors (600A)
● High Speed Switching
● Low Control Power

Low Input Current Harmonics (THD)

● 4% typical (100% load)
● 5% typical (75% load)
● 7% typical (50% load)
(No additional filtering required)

Generator Sizing Ratio (UPS)

● 1:1 (UPS kVA / Generator kW) Low Heat Loss / High Efficiency
Use of IGBT enables efficient high-speed switching thus reduc- ing heat dissipation in the UPS. (Higher efficiency means lower cost per kilowatt to the customer.)